ELECTRICAL PROPERTIES OF TlInSe2 CRYSTAL

Abstract

The temperature and frequency dependences of the dielectric permittivity of TlInSe2 crystals are studied at AC. The dielectric constant values were determined. It is assumed that the increase in ε' is associated with an increase in the concentration of defects with increasing temperature. It has been established that in the temperature range 290 - 380K at frequencies 102 - 106 Hz for electrical conductivity the law σ f S (0.1S1.0 is satisfied. In a TlInSe2 crystal, the change in electrical conductivity depending on frequency can be explained as follows: in crystals, there are clusters containing localized states with close energies, and electron hopping occurs between them. In the TlInSe2 compound, conductivity is characterized by band-hopping mechanisms.